Datasheet > XP04401|XP4401

XP04401|XP4401

更新时间： 2024-09-18 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	103K
描述
Composite Device - Composite Transistors

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中文翻译

获取价格

数据手册

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XP04401|XP4401 数据手册

Composite Transistors

XP04401 (XP4401)

Silicon PNP epitaxial planar type

Unit: mm

+0.05

0.12

–0.02

For general amplification

0.2 ^0.05

■ Features

• Two elements incorporated into one package

• Reduction of the mounting area and assembly cost by one half

(0.65) (0.65)

1.3 0.1

2.0 0.1

■ Basic Part Number

• 2SB0709A (2SB709A) × 2

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

EIAJ: SC-88

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

SMini6-G1 Package

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−60

−50

−7

Collector current

I_C

I_CP

P_T

−100

−200

°C

Marking Symbol: 5K

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

Internal Connection

150

T_j

150

T_stg

−55 to +150

°C

Tr1

Tr2

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

Min

−60

−50

−7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_B= 0

V_CE= −10 V, I_C= −2 mA

− 0.1

−100

460

µA



I_CEO

h_FE

160

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −100 mA, I_B= −10 mA

− 0.3 − 0.5

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

2.7

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2004

SJJ00184BED

12 3 4

中文翻译

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